The enhanced performance benefits from the combined action of the strong photogating effect induced by ferroelectric local electrostatic field and the voltage amplification based on ferroelectric NC effect.
The prototype photodetectors demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and ultrahigh photodetectivity of 4.75 × 10 14 cm Hz 1/2 W −1 at room temperature. Here, we report an ultrasensitive negative capacitance (NC) MoS 2 phototransistor with a layer of ferroelectric hafnium zirconium oxide film in the gate dielectric stack. Previously reported methods to improve the performance of MoS 2 photodetectors have focused on complex hybrid systems in which leakage paths and dark currents inevitably increase, thereby reducing the photodetectivity. Two-dimensional molybdenum disulfide (MoS 2) with unique crystal structure, and extraordinary electrical and optical properties is a promising candidate for ultrasensitive photodetection. Sensitive photodetection is crucial for modern optoelectronic technology.
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